Superconductivity in doped cubic silicon: an ab initio study

E. Bourgeois; X. Blase

doi:10.1063/1.2719663

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Superconductivity in doped cubic silicon: an ab initio study

E. Bourgeois, X. Blase

arXiv:cond-mat/0701194 · DOI 10.1063/1.2719663 · 2007-01-10 · Applied Physics Letters

T2computational36 citations

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Abstract

We study within a first-principle approach the band structure, vibrational modes and electron-phonon coupling in boron, aluminum and phosphorus doped silicon in the diamond phase. Our results provide evidences that the recently discovered superconducting transition in boron doped cubic silicon can be explained within a standard phonon-mediated mechanism. The importance of lattice compression and dopant related stretching modes are emphasized. We find that T$_C$ can be increased by one order of magnitude by adopting aluminum doping instead of boron.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.24	Pressure not reported	unknown
Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.34	Pressure not reported	unknown
Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	2.8	Pressure not reported	unknown
Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown