Mechanism of enhancement of electromagnetic properties of MgB2 by nano-SiC doping
S. X. Dou, O. Shcherbakova, W. K. Yeoh, J. H. Kim, S. Soltanian, X. L. Wang, C. Senatore, R. Flukiger, M. Dhalle, O. Husnjak, E. Babic
arXiv:cond-mat/0701391 · 2007-01-16 · arXiv: Superconductivity
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Abstract
A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
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