High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-δ}
Pengcheng Li, F. F. Balakirev, R. L. Greene
arXiv:cond-mat/0702534 · DOI 10.1103/PhysRevLett.99.047003 · 2007-02-22 · Physical review letters
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Abstract
We report resistivity and Hall effect measurements in electron-doped Pr$_{2-x}$Ce$_{x}$CuO$_{4-δ}$ films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising non-linear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also observe a crossover from quadratic to linear field dependence of the positive magnetoresistance in the overdoped films. A spin density wave induced Fermi surface reconstruction model can be used to qualitatively explain both the Hall effect and magnetoresistance.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Pr1.87Ce0.13CuO4-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 11 | Pressure not reported | unknown |
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