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Effects of carrier concentration on the superfluid density of high-T_c cuprates

C. Panagopoulos, B. D. Rainford, J. R. Cooper, W. Lo, J. L. Tallon, J. W. Loram, J. Betouras, Y. S. Wang, C. W. Chu

arXiv:cond-mat/9903117 · DOI 10.1103/PhysRevB.60.14617 · 1999-03-06 · Physical Review B

T2theoretical71 citations

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Abstract

The absolute values and temperature, T, dependence of the in-plane magnetic penetration depth, $λ_{ab}$, of La_{2-x}Sr_xCuO_4 and HgBa_2CuO_{4+δ} have been measured as a function of carrier concentration. We find that the superfluid density, $ρ_s$, changes substantially and systematically with doping. The values of $ρ_{s}(0)$ are closely linked to the available low energy spectral weight as determined by the electronic entropy just above T_c and the initial slope of $ρ_{s}(T)/ρ_{s}(0)$ increases rapidly with carrier concentration. The results are discussed in the context of a possible relationship between $ρ_s$ and the normal-state (or pseudo) energy gap.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La1.9Sr0.1CuO4

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30Pressure not reportedunknown
La1.9Sr0.1CuO4

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30Pressure not reportedunknown
La1.85Sr0.15CuO4

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37.7Pressure not reportedunknown
La1.85Sr0.15CuO4

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37.7Pressure not reportedunknown
La1.8Sr0.2CuO4

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36Pressure not reportedunknown
La1.78Sr0.22CuO4

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27.5Pressure not reportedunknown
La1.76Sr0.24CuO4

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20.3Pressure not reportedunknown
HgBa2CuO4.10

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

60Pressure not reportedunknown
HgBa2CuO4.37

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

35Pressure not reportedunknown

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