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Effects of carrier concentration on the superfluid density of high-Tc cuprates

C. Panagopoulos, B. D. Rainford, J. R. Cooper, W. Lo, J. L. Tallon, J. W. Loram, J. Betouras, Y. S. Wang, C. W. Chu

DOI 10.1103/PhysRevB.60.14617 · Physical Review B

T1

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Abstract

The absolute values and temperature, T, dependence of the in-plane magnetic penetration depth of La2−xSrxCuO4 and HgBa2CuO4+δ have been measured as a function of carrier concentration. We find that the superfluid density ρs changes substantially and systematically with doping. The values of ρs(0) are closely linked to the available low-energy spectral weight as determined by the electronic entropy just above Tc, and the magnitude of the initial slope of [ρs(T)/ρs(0)] increases rapidly with carrier concentration. The results are discussed in the context of a possible relationship between ρs and the normal-state (or pseudo)energy gap.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La2-xSrxCuO4

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30Pressure not reportedunknown
La2-xSrxCuO4

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37.7Pressure not reportedunknown
La2-xSrxCuO4

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36Pressure not reportedunknown
La2-xSrxCuO4

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27.5Pressure not reportedunknown
La2-xSrxCuO4

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20.3Pressure not reportedunknown
HgBa2CuO4

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60Pressure not reportedunknown
HgBa2CuO4

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35Pressure not reportedunknown

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