Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields
S. I. Vedeneev, A. G. M. Jansen, B. A. Volkov, P. Wyder
arXiv:cond-mat/9906239 · 1999-06-16
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Abstract
Magnetoresistance (MR) in the out-of-plane resistivity $ρ_c$ for the normal state of the one-layer high-quality Bi_2Sr_2CuO_x single crystals under various dc magnetic fields up to 28 T over the temperature region 6-100 K has been measured. We observed the anomalously large negative longitudinal MR up to 60%. At low temperatures the normal-state MR in contrast to the MR in mixed state is independent of the direction of the current relatively to the field direction suggesting uniquely the spin dominated origin of that. The magnitude of the MR is activated in magnetic field and temperature. We interpret the activated form of $ρ_c$ and the negative MR in terms of 2D stacked alternating metallic and dielectric layers assuming the tunneling between CuO_2 planes. If the main fluctuations inside CuO_2 planes have magnetic origin, the magnetic field suppresses these fluctuations leading to the uniform spin orientation. In this case the interlayer current will be enhanced well.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Bi2Sr2CuOy Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 13 | Pressure not reported | unknown |
| Bi2Sr2CuO6+δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 9.5 | Pressure not reported | midpoint |
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