Ginzburg-Landau Theory of Josephson Field Effect Transistors

J. J. Betouras; R. Joynt; Z. -W. Dong; T. Venkatesan; P. Hadley

doi:10.1063/1.117661

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Ginzburg-Landau Theory of Josephson Field Effect Transistors

J. J. Betouras, R. Joynt, Z. -W. Dong, T. Venkatesan, P. Hadley

arXiv:supr-con/9607002 · DOI 10.1063/1.117661 · 1996-07-11 · Applied Physics Letters

T2theoretical6 citations

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Abstract

A theoretical model of high-T_c Josephson Field Effect Transistors (JoFETs) based on a Ginzburg-Landau free energy expression whose parameters are field- and spatially- dependent is developed. This model is used to explain experimental data on JoFETs made by the hole-overdoped Ca-SBCO bicrystal junctions (three terminal devices). The measurements showed a large modulation of the critical current as a function of the applied voltage due to charge modulation in the bicrystal junction. The experimental data agree with the solutions of the theoretical model. This provides an explanation of the large field effect, based on the strong suppresion of the carrier density near the grain boundary junction in the absence of applied field and the subsequent modulation of the density by the field.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Ca0.3Sm0.7Ba2Cu3Oy Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	70	Pressure not reported	unknown