Pressure-induced superconductivity in GeAs
Lixue Liu, Viktor V. Struzhkin, Jianjun Ying
DOI 10.1103/PhysRevB.100.214516 · Physical Review B
Active bibliographic source — not scientific approval
Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.
Abstract
We performed high-pressure Raman and resistance measurements on a two-dimensional monoclinic semiconductor GeAs. We discovered a superconductivity that emerges after the insulator-metal transition above 10 GPa, which is related to the structural transition. Our results indicate that the semiconducting monoclinic phase and rocksalt structure phase coexist above 10 GPa and structural transformation to the rocksalt phase is completed above 17∼18GPa. The maximum superconducting transition temperature Tc is about 8 K close to the structural transition boundary, and the Tc is gradually decreasing at higher pressures. Upon pressure release, the nonpolar rocksalt structure transforms to a polar tetragonal superconducting phase. Our first-principles calculations indicate that the relatively high Tc in the rocksalt phase is mainly due to the enhancement of the electron-phonon coupling. These results show that superconductivity in this material strongly depends on its structure, achieving maximum Tc in a higher-symmetry phase.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| GeAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8 | 15.3 GPa | onset |
| GeAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.6 | 10 GPa | unknown |
| GeAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.5 | 20 GPa | unknown |
| GeAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.6 | Pressure unresolved | unknown |
| GeAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.25 | Pressure unresolved | unknown |
Similar papers
Pressure-induced robust superconductivity in layered binary monochalcogenides GeS under extreme compression up to 200 GPa
similarity 0.93Chao Wang et al.
Source status unknown — claims are unverified
Pressure-induced superconductivity and nontrivial band topology in compressed γ-InSe
similarity 0.92Shiqiu Liu et al.
Source status unknown — claims are unverified
Superconductivity in multiple phases of compressed GeSb2Te4
similarity 0.92E. Greenberg et al.
Source status unknown — claims are unverified
Superconducting films fabricated by high-fluence Ga implantation in Si
similarity 0.92J. Fiedler et al.
Source status unknown — claims are unverified
Pressure-induced transformations and superconductivity of amorphous germanium
similarity 0.92O. I. Barkalov et al.
Source status unknown — claims are unverified
Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium
similarity 0.91Slawomir Prucnal et al.
Source status unknown — claims are unverified