Pressure-induced superconductivity and nontrivial band topology in compressed γ-InSe
Shiqiu Liu, Ye Yang, Fanghang Yu, Xikai Wen, Zhigang Gui, Kunling Peng, Rui Wang, Jianjun Ying
DOI 10.1103/PhysRevB.105.214506 · Physical Review B
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Abstract
We performed high-pressure electrical transport and Raman measurements on a two-dimensional rhombohedral semiconductor γ-InSe. Our results confirm two structural phase transitions at high pressure. More interestingly, a domelike superconducting transition with maximum Tc around 2.3 K is discovered when the compound transforms to the cubic CsCl phase above 40 GPa. Our first-principles calculations indicate that the high-pressure superconducting phase possesses nontrivial topological band structure in the vicinity of the Fermi level. These results show that the physical properties in this material strongly depend on its structure, which provides insights into the interplay between superconductivity and topological physics. Our work suggests promising emergent phenomena in this material and other related III-VI semiconductors under high-pressure conditions.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| InSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 2.3 | 44 GPa | onset |
| GaSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5 | 25 GPa | unknown |
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