Nodeless superconducting gap in the candidate topological superconductor Sn1−xInxTe for x=0.7
M. P. Smylie, Kaya Kobayashi, T. Takahashi, C. Chaparro, A. Snezhko, W.-K. Kwok, U. Welp
DOI 10.1103/PhysRevB.101.094513 · Physical Review B
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Abstract
High-pressure synthesis techniques have allowed for the growth of Sn1−xInxTe samples beyond the ambient In-saturation limit of x=0.5 (Tc∼4.5 K). In this study we present measurements of the temperature dependence of the London penetration depth Δλ(T) in this superconducting doped topological insulator for x=0.7, where Tc,onset≈5 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity A2u pairing; however, odd-parity A1u pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn0.3In0.7Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.9 | Pressure unresolved | onset |
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.5 | Pressure unresolved | unknown |
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