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Critical current density and vortex phase diagram in the superconductor Sn0.55In0.45Te

Yiming Wang, Mingtao Li, Cuiying Pei, Lingling Gao, Kejun Bu, Dong Wang, Xuqiang Liu, Limin Yan, Jia Qu, Nana Li, Bihan Wang, Yifei Fang, Yanpeng Qi, Wenge Yang

DOI 10.1103/PhysRevB.106.054506 · Physical Review B

T1

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Abstract

Critical current density and vortex pinning dynamics have been studied in the superconductor Sn0.55In0.45Te. Analysis of the temperature-dependent lower critical field shows that it has a weakly anisotropic single energy gap. The critical current density Jc(0) and pinning potential U0(H) values reach as high as 2.56×103A/cm2 at 1.8 K and 2.1×103 K at μ0H=0.01T, respectively. Based on the collective pinning model, we demonstrate the coexistence of vortex pinning regimes in Sn0.55In0.45Te. One is a δTc pinning regime induced by the spatial fluctuations of the transition temperature in a low field. The other is a dominantly δl pinning regime associated with the spatial variations of the charge-carrier mean free path in a higher field. This causes a nonconstant exponent of the power-law behavior Jc(T)∝Hn. A very weak vortex fluctuation is unveiled by a narrow separation between the irreversibility field μ0Hirr(T) and upper critical field μ0Hc2(T) in the vortex phase diagram. We discuss the potential application in superconducting electronics like the single-photon detector in thin film form.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sn0.55In0.45Te

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5.1Pressure not reportedonset
Sn0.55In0.45Te

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5.04Pressure not reportedzero_resistance
SnTe

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—Pressure not reportedunknown
Sn1-xInxTe

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5.1Pressure not reportedunknown
Sn0.96In0.04Te

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—Pressure not reportedunknown
Sn0.6In0.4Te

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—Pressure not reportedunknown

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