Pressure-induced metallization and superconductivity in the layered van der Waals semiconductor GaTe
Jin Jiang, Xuliang Chen (陈绪亮), Shuyang Wang, Chao An, Ying Zhou, Min Zhang, Yonghui Zhou, Zhaorong Yang
DOI 10.1103/PhysRevB.107.024512 · Physical Review B
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Abstract
We present a systematic high-pressure study of layered van der Waals semiconductor GaTe through electrical transport, photoluminescence, and Raman spectroscopy measurements. We report observation of pressure-induced metallization and superconductivity (SC) in GaTe simultaneously occurring at ∼3 GPa, with an onset superconducting critical temperature of TConset∼5.0K. Analysis shows that a quasi–two-dimensional to three-dimensional structural crossover plays a crucial role in driving the observed metallization and SC. Upon further compression, TConset first decreases gradually and then begins to increase above ∼10 GPa, displaying a V-shaped feature (SC-I→SC-II) due to a structural transition (C2/m→Fm−3m). After reaching a local maximum of 4.5 K at ∼18 GPa, TConset remains almost unchanged up to a highest pressure of 48.1 GPa. A comparison of the upper critical fields at different pressures spanning the SC-I and SC-II phases reveals that their pairing mechanisms may be different from each other. These results demonstrate that the band gap of layered semiconductor GaTe is highly tunable, which may stimulate further investigations by strain engineering, intercalation, and electrostatic doping.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| GaTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5 | 3.3 GPa | onset |
| GaTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3 | 3.3 GPa | zero_resistance |
| GaTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.6 | 18.1 GPa | onset |
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