Nonequilibrium carrier transport in superconducting niobium-silicon heterostructures
W. M. van Huffelen, T. M. Klapwijk, L. de Lange
DOI 10.1103/PhysRevB.45.535 · Physical Review B
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Abstract
Carrier transport through a 50-nm-thick single-crystal silicon film sandwiched between two superconducting electrodes is studied. A strongly voltage-dependent normal current is found, substantially below the value in the normal state, together with the structure at submultiples of the superconducting energy gap. The results are explained as a hot-electron effect, taking into account elastic and Andreev scattering at the interfaces and ignoring energy relaxation in the silicon. It is argued that the elastic scattering at the interfaces is due to Fermi-momentum mismatch.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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