Disorder and superconductivity in Mo/Si multilayers
N. Ya. Fogel, E. I. Buchstab, A. S. Pokhila, A. I. Erenburg, V. Langer
DOI 10.1103/PhysRevB.53.71 · Physical Review B
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Abstract
Tc vs R□ dependence in thin Mo films and Mo/Si multilayers is simultaneously of three-dimensional (3D) and 2D nature: the main effect of disorder consists in essential increase of ‘‘bulk’’ Tc0 which appears to exceed many times Tc0 for pure Mo. The x-ray data enable one to explain the origin of Tc0 enhancement in relatively thick layers. The depression of Tc with increasing sheet resistance was observed on Mo/Si multilayers in agreement with the theory of superconductivity in disordered 2D metals. It is found that Tc(R□) dependence for multilayers is quite close to one for single Mo films. © 1996 The American Physical Society.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Mo Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7.3 | Pressure not reported | midpoint |
| Mo Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 0.92 | Pressure not reported | unknown |
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