Electric-Field-Induced Electronic Instability in Amorphous Mo3Si Superconducting Films
A. V. Samoilov, M. Konczykowski, N. -C. Yeh, S. Berry, C. C. Tsuei
DOI 10.1103/PhysRevLett.75.4118 · Physical Review Letters
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Abstract
We report experimental evidence for the electric-field-induced electronic instability in the vortex state of superconducting amorphous Mo3Si films. At low magnetic fields, this instability results in an anticlockwise hysteresis of the voltage-current characteristics, as predicted by Larkin and Ovchinnikov, whereas at high magnetic fields the hysteresis is clockwise. To explain the unprecedented clockwise hysteresis, we propose that the inelastic quasiparticle scattering rate is higher after the electronic system is driven into the normal state by the electric field.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Mo3Si Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8 | Pressure not reported | zero_resistance |
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