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Model of c-axis resistivity of high-Tc cuprates

Yuyao Zha, S. L. Cooper, David Pines

DOI 10.1103/PhysRevB.53.8253 · Physical Review B

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Abstract

We propose a simple model which accounts for the major features and systematics of experiments on the c=axis resistivity, ρc for La2−xSrxCuO4, YBa2Cu3O6+x, and Bi2Sr2CaCu2O8. We argue that the c-axis resistivity can be separated into contributions from in-plane dephasing and the c-axis ‘‘barrier’’ scattering processes, with the low-temperature semiconductorlike behavior of ρc arising from the suppression of the in-plane density of states measured by in-plane magnetic Knight shift experiments. We report on predictions for ρc in impurity-doped YBa2Cu3O6+x materials. © 1996 The American Physical Society.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La2-xSrxCuO4

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—Pressure not reportedunknown
YBa2Cu3O6+x

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
Bi2Sr2CaCu2O8

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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