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Resistivity saturation in an electron-doped cuprate

Nicholas R. Poniatowski, Tarapada Sarkar, Sankar Das Sarma, Richard L. Greene

DOI 10.1103/PhysRevB.103.L020501 · Physical Review B

T1

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Abstract

We report the observation of resistivity saturation in lightly doped (x=0.08) as-grown samples of the electron-doped cuprate La2−xCexCuO4. The saturation occurs at resistivity values roughly consistent with the phenomenological Mott-Ioffe-Regel criterion once the low effective carrier density of these materials is included in the analysis. These results imply that, at least for light doping, the high-temperature metallic phase of these materials is not necessarily strange and may be understood as simply a low-density metal.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La2-xCexCuO4

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—Pressure not reportedunknown
La2CuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
Bi2+xSr2-yCuO6±δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
La2-xSrxCuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
YBa2Cu4O8

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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