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Reentrant superconductivity mechanisms in amorphous carbon-silicon films containing tungsten

S. M. Chudinov, R. Ferretti, S. Fusari, G. Mancini, S. Stizza

DOI 10.1103/PhysRevB.62.12516 · Physical Review B

T1

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Abstract

A model—based on Josephson junctions array and Coulomb blockage—is presented that is capable to explain reentrant resistive peaks in diamondlike carbon-silicon films containing tungsten. Such systems show a main transition together with one or two reentrant or quasireentrant ones: computer simulations for one reentrant resistive peak have been performed that confirm with clear evidence the experimental data.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
W2C

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
WxC1-x

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
W0.6Si0.4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2.8Pressure not reportedunknown

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