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Nonconstant electronic density of states tunneling inversion for A15 superconductors: Nb3Sn

J. K. Freericks, Amy Y. Liu, A. Quandt, J. Geerk

DOI 10.1103/PhysRevB.65.224510 · Physical Review B

T1

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Abstract

We reexamine the tunneling data on A15 superconductors by performing a generalized McMillan-Rowell tunneling inversion that incorporates a nonconstant electronic density of states obtained from band-structure calculations. For Nb3Sn, we find that the fit to the experimental data can be slightly improved by taking into account the sharp structure in the density of states, but it is likely that such an analysis alone is not enough to explain completely the superconducting tunneling characteristics of this material. Nevertheless, the extracted Eliashberg function displays a number of features expected to be present for the highest-quality Nb3Sn samples.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Nb3Sn

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18Pressure not reportedunknown
V3Si

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17Pressure not reportedunknown
V3Ga

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15Pressure not reportedunknown
Nb3Al

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23Pressure not reportedunknown
Nb3Ga

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23Pressure not reportedunknown
Nb3Ge

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23Pressure not reportedunknown
Nb3Si

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23Pressure not reportedunknown

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