Parity effect and tunnel magnetoresistance of ferromagnet/superconductor/ferromagnet single-electron tunneling transistors
Hiroshi Imamura, Yasuhiro Utsumi, Hiromichi Ebisawa
DOI 10.1103/PhysRevB.66.054503 · Physical Review B
Active bibliographic source — not scientific approval
Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.
Abstract
We theoretically study the tunnel magnetoresistance (TMR) of ferromagnet/superconductor/ferromagnet single-electron tunneling transistors with special attention paid to the parity effect. It is shown that in the plateau region, there is no spin accumulation in the island even at finite bias voltage. However, the information of the injected spin is carried by the excess electron and thus the TMR exists. The spin relaxation rate of the excess electron can be estimated from the TMR. We also show that the TMR increases with decreasing size of the superconducting island.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
Similar papers
Detecting parity effect in a superconducting device in the presence of parity switches
similarity 0.94E. T. Mannila et al.
Source status unknown — claims are unverified
Magnetic-field-induced crossover from 2e to e periodicity in the superconducting single-electron transistor
similarity 0.93J. G. Lu et al.
Source status unknown — claims are unverified
Temperature dependence of even-odd electron-number effects in the single-electron transistor with a superconducting island
similarity 0.93M. Tinkham et al.
Source status unknown — claims are unverified
Giant enhancement to spin battery effect in superconductor/ferromagnetic insulator systems
similarity 0.93Risto Ojajärvi et al.
Source status unknown — claims are unverified
Meservey-Tedrow effect in ferromagnet/superconductor/ferromagnet double tunnel junctions
similarity 0.93Gerd Bergmann et al.
Source status unknown — claims are unverified
Parity Effect and Tunnel Magnetoresistance of Ferromagnet / Superconductor / Ferromagnet Single-Electron Tunneling Transistors
similarity 0.92Hiroshi Imamura et al. · 2002 · arXiv:cond-mat/0205541
Source status unknown — claims are unverified