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Transport properties of electron-doped La2−xCexCuO4 cuprate thin films

H. Wu, L. Zhao, J. Yuan, L. X. Cao, J. P. Zhong, L. J. Gao, B. Xu, P. C. Dai, B. Y. Zhu, X. G. Qiu, B. R. Zhao

DOI 10.1103/PhysRevB.73.104512 · Physical Review B

T1

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Abstract

Electron-doped La2−xCexCuO4 (x=0.06–0.20) thin films with two orientations (100) and (103) were successfully grown and their transport properties were investigated. It is found that the temperature dependence of the in-plane resistivity ρab evolves from semiconducting behavior for underdoped films to two-dimensional Fermi liquid behavior for optimally and overdoped ones, while the c-axis resistivity ρc shows nonmetallic behavior except for heavily overdoped films. The doping-dependent anisotropy factor ρc∕ρab is found to vary from 60 to 1500 at 50K, and the largest anisotropy value related to the highest TC is obtained at the optimal doping (x=0.10).

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La2-xCexCuO4

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28.5Pressure not reportedonset
La2-xCexCuO4

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

27.6Pressure not reportedzero_resistance

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