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Enhancement of electronic inhomogeneities due to out-of-plane disorder in Bi2Sr2CuO6+δ superconductors observed by scanning tunneling spectroscopy

A. Sugimoto, S. Kashiwaya, H. Eisaki, H. Kashiwaya, H. Tsuchiura, Y. Tanaka, K. Fujita, S. Uchida

DOI 10.1103/PhysRevB.74.094503 · Physical Review B

T1

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Abstract

Nanoscale electronic inhomogeneity in optimally doped single-layer Bi2Sr1.6L0.4CuO6+δ, (L-Bi2201, L=La and Gd) as well as bilayer Bi2Sr2CaCu2O8+δ (Bi2212), superconductors has been investigated by the low-temperature scanning-tunneling-microscopy and spectroscopy. The inhomogeneous gap structures are observed above and below Tc on Gd-Bi2201. Increasing the out-of-plane disorder which is controlled by mismatch of the ionic radius between Sr and Ln results in the enhancement of pseudogap region with suppressed coherence peaks in the conductance spectrum, making the gap average larger and the gap distribution wider. The degree of electronic inhomogeneity measured by the distribution width of the gap amplitude is shown to have a correlation with Tc in optimally doped Bi2201 and Bi2212.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr1.6La0.4CuO6+δ

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34Pressure not reportedunknown
Bi2Sr1.6La0.4CuO6+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

34Pressure not reportedunknown
Bi2Sr1.6Gd0.4CuO6+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

14Pressure not reportedunknown
Bi2Sr1.6Gd0.4CuO6+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

14Pressure not reportedunknown
Bi2.1Sr1.9CaCu2O8+δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

93Pressure not reportedunknown

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