Interface charge doping effects on superconductivity of single-unit-cell FeSe films on SrTiO3 substrates
Wenhao Zhang, Zhi Li, Fangsen Li, Huimin Zhang, Junping Peng, Chenjia Tang, Qingyan Wang, Ke He, Xi Chen, Lili Wang, Xucun Ma, Qi-Kun Xue
DOI 10.1103/PhysRevB.89.060506 · Physical Review B
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Abstract
We prepare single-unit-cell FeSe films on insulating SrTiO3 substrates by molecular beam epitaxy and investigate the evolution of their superconducting properties with annealing by in situ scanning tunneling microscopy and scanning tunneling spectroscopy and ex situ transport measurements. We find that through an annealing process, the superconductivity of 1-uc FeSe films on SrTiO3 substrates develops with the formation of stoichiometric FeSe films and is further enhanced by charge transfer from SrTiO3 substrates to FeSe films. Moreover, the superconductivity is independent of the bulk property of the SrTiO3 substrate, regardless of whether it is insulating or conductive. Our results reveal that the high-temperature superconductivity of 1-uc FeSe films on SrTiO3 substrates indeed occurs at the FeSe/SrTiO3 interface, where the electron doping at FeSe films plays an important role in this interfacial superconductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 68 | Pressure not reported | onset |
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 40 | Pressure not reported | onset |
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