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Fully gapped superconductivity in In-doped topological crystalline insulator Pb0.5Sn0.5Te

Guan Du, Zengyi Du, Delong Fang, Huan Yang, R. D. Zhong, J. Schneeloch, G. D. Gu, Hai-Hu Wen

DOI 10.1103/PhysRevB.92.020512 · Physical Review B

T1

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Abstract

Superconductors derived from topological insulators and topological crystalline insulators by chemical doping have long been considered to be candidates as topological superconductors. Pb0.5Sn0.5Te is a topological crystalline insulator with mirror symmetry protected surface states on (001)-, (011)-, and (111)-oriented surfaces. The superconductor (Pb0.5Sn0.5)0.7In0.3Te is produced by In doping in Pb0.5Sn0.5Te, and is thought to be a topological superconductor. Here we report scanning tunneling spectroscopy measurements of the superconducting state as well as the superconducting energy gap in (Pb0.5Sn0.5)0.7In0.3Te on a (001)-oriented surface. The spectrum can be well fitted by an anisotropic s-wave gap function of Δ(θ)=0.72+0.18cos4θ meV using Dynes model. The results show that the superconductor seems to be a fully gapped one without any in-gap states, in contradiction with the expectation of a topological superconductor.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
(Pb0.5Sn0.5)0.7In0.3Te

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4.7Pressure not reportedonset
(Pb0.5Sn0.5)0.7In0.3Te

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

4.5Pressure not reportedonset
(Pb0.5Sn0.5)0.7In0.3Te

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4.7Pressure not reportedunknown
CuxBi2Se3

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—Pressure not reportedunknown
Sn1-xInxTe

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—Pressure not reportedunknown

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