Surface electronic state of superconducting topological crystalline insulator
Tatsuki Hashimoto, Keiji Yada, Masatoshi Sato, Yukio Tanaka
DOI 10.1103/PhysRevB.92.174527 · Physical Review B
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Abstract
We study the surface state of a doped topological crystalline insulator in the superconducting state. Motivated by Sn1−xInxTe, we consider fully gapped pair potentials and calculate the surface spectral function. It is found that mirror-protected zero-energy surface Andreev bound states (SABSs) appear at the (001) surface. The gapless points of these SABSs appear on the mirror-symmetric line on the surface Brillouin zone while the positions of the gapless points depend on the chemical potential. In addition, due to the presence of the Dirac surface states in the normal state, the dispersion of the SABSs drastically changes with the chemical potential.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| CuxBi2Se3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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