Crossover from retro to specular Andreev reflections in bilayer graphene
Dmitri K. Efetov, Konstantin B. Efetov
DOI 10.1103/PhysRevB.94.075403 · Physical Review B
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Abstract
Ongoing experimental progress in the preparation of ultraclean graphene/superconductor (SC) interfaces enabled the recent observation of specular interband Andreev reflections (ARs) at bilayer graphene (BLG)/NbSe2 van der Waals interfaces [Efetov et al., Nat. Phys. 12, 328 (2016)]. Motivated by this experiment we theoretically study the differential conductance across a BLG/SC interface at the continuous transition from high to ultralow Fermi energies EF in BLG. Using the Bogoliubov-de Gennes equations and the Blonder-Tinkham-Klapwijk formalism we derive analytical expressions for the differential conductance across the BLG/SC interface. We find a characteristic signature of the crossover from intraband retro (high EF) to interband specular (low EF) ARs that manifests itself in a strongly suppressed interfacial conductance when the excitation energy |ɛ|=|EF|<Δ (the SC gap). The sharpness of these conductance dips is strongly dependent on the size of the potential step at the BLG/SC interface U0.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbSe2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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