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Pressure dependence of Tc in L2−xMxCuO4−y (L=Pr,Nd,Sm,Eu; M=Ce,Th): Antisymmetric behavior of electron- versus hole-doped copper-oxide superconductors

J. T. Markert, J. Beille, J. J. Neumeier, E. A. Early, C. L. Seaman, T. Moran, M. B. Maple

DOI 10.1103/PhysRevLett.64.80 · Physical Review Letters

T1

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Abstract

Measurements of the superconducting transition temperature Tc in the electron-doped copper-oxide compounds L2−xMxCuO4−y under pressure P to ∼20 kbar reveal that, in general, Tc decreases with P, in contrast to the behavior of hole-doped copper-oxide compounds. The quantity d lnTc/d lnV exhibits a dependence on Tc similar to that of hole-doped compounds, but opposite in sign, and can be as large as ∼24. Correlation of structural and transport properties indicates competition between interlayer and intralayer effects in these materials.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Pr1.85Th0.15CuO4-y

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18Pressure unresolvedonset
Nd1.85Ce0.15CuO4-y

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—Pressure not reportedunknown
Nd1.85Th0.15CuO4-y

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—Pressure not reportedunknown
Sm2-xCexCuO4-y

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3.9Pressure unresolvedonset
Sm2-xCexCuO4-y

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14.7Pressure unresolvedonset

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