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Superconductor-to-Insulator Transition and Transport Properties of Underdoped YBa2Cu3Oy Crystals

Kouichi Semba, Azusa Matsuda

DOI 10.1103/PhysRevLett.86.496 · Physical Review Letters

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Abstract

The carrier-concentration-driven superconductor-to-insulator (SI) transition as well as transport properties in underdoped YBa2Cu3Oy twinned crystals is studied. The SI transition takes place at y≃6.3, carrier concentration nHSI≃3×1020cm−3, anisotropy ρc/ρab≃103, and the threshold resistivity ρabSI∼0.8mΩcm which corresponds to a critical sheet resistance h4e2≃6.5kΩ per CuO2 bilayer. The evolution of a carrier, nH∝y−6.2, is clearly observed in the underdoped region. The resistivity and Hall coefficient abruptly acquire strong temperature dependence at y≃6.5 indicating a radical change in the electronic state.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
YBa2Cu3Oy

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—Pressure not reportedunknown
YBa2Cu3O6.38

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown
YBa2Cu1-zZnz3O6.63

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—Pressure not reportedunknown
La2-xSrxCu1-zZnzO4

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—Pressure not reportedunknown

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