Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy

T. Kawaguchi; H. Uemura; T. Ohno; R. Watanabe; M. Tabuchi; T. Ujihara; K. Takenaka; Y. Takeda; H. Ikuta

doi:10.1143/APEX.2.093002

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Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy

T. Kawaguchi, H. Uemura, T. Ohno, R. Watanabe, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, H. Ikuta

arXiv:0907.3108 · DOI 10.1143/APEX.2.093002 · 2009-07-17 · Applied Physics Express

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Abstract

Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the optimum growth condition showed no indication of impurity phases. Only (00l) peaks were observed, indicating that NdFeAsO was grown with the c-axis perpendicular to the substrate. The window of optimum growth condition was very narrow, but the NdFeAsO phase was grown with a very good reproducibility. Despite the absence of any appreciable secondary phase, the resistivity showed an increase with decreasing temperature.