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In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy

T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, H. Ikuta

arXiv:1005.0186 · DOI 10.1063/1.3464171 · 2010-05-03 · Applied Physics Letters

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Abstract

The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
NdFeAs(O,F)

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48Pressure not reportedonset
NdFeAs(O,F)

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42Pressure not reportedzero_resistance
NdFeAs(O,F)

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40Pressure not reportedonset
NdFeAs(O,F)

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45Pressure not reportedonset
NdFeAs(O,F)

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38Pressure not reportedzero_resistance
BaFe2As2

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40Pressure not reportedonset

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