Epitaxial LaFeAsOF thin films grown by pulsed laser deposition
M. Kidszun, S. Haindl, E. Reich, J. Haenisch, L. Schultz, B. Holzapfel
arXiv:0909.3788 · DOI 10.1088/0953-2048/23/2/022002 · 2009-09-21 · Superconductor Science and Technology
Active bibliographic source — not scientific approval
Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.
Abstract
Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| LaFeAsO0.75F0.25 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 25 | Pressure not reported | onset |
| LaFeAsO0.75F0.25 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 17 | Pressure not reported | zero_resistance |
Similar papers
Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition
similarity 0.90E. Backen et al. · 2008 · arXiv:0808.1864
Source status unknown — claims are unverified
Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
similarity 0.88T. Kawaguchi et al. · 2009 · arXiv:0907.3108
Source status unknown — claims are unverified
LaFeAsOF thin films: high upper critical fields and evidence of weak link behavior
similarity 0.88S. Haindl et al. · 2009 · arXiv:0907.2271
Source status unknown — claims are unverified
In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy
similarity 0.88T. Kawaguchi et al. · 2010 · arXiv:1005.0186
Source status unknown — claims are unverified
Superconductivity and Dirac Fermions in 112-phase Pnictides
similarity 0.88S. J. Ray & L. Alff · 2017 · arXiv:1701.02700
Source status unknown — claims are unverified
Upper critical field, Hall effect and magnetoresistance in the iron-based layered superconductor LaFeAsO_{0.9}F_{0.1-δ}
similarity 0.87Xiyu Zhu et al. · 2008 · arXiv:0803.1288
Source status unknown — claims are unverified