DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

Takayoshi Katase; Yoshihiro Ishimaru; Akira Tsukamoto; Hidenori Hiramatsu; Toshio Kamiya; Keiichi Tanabe; Hideo Hosono

doi:10.1088/0953-2048/23/8/082001

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DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

arXiv:1005.2021 · DOI 10.1088/0953-2048/23/8/082001 · 2010-05-12 · Superconductor Science and Technology

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Abstract

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
BaFe2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	—