Perfect Domain-Lattice Matching Between MgB2 and Al2O3: Single-Crystal MgB2 Thin Films Grown on Sapphire
Won Kyung Seong, Sangjun Oh, Won Nam Kang*
arXiv:1006.3169 · DOI 10.1016/j.physc.2011.05.058 · 2010-06-16 · Japanese Journal of Applied Physics
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Abstract
We have found that single-crystal films can be grown on (0001) Al2O3 substrates through the golden relation of a perfect lattice-matching ratio between the a-axis lattice constants of MgB2 and Al2O3. Selected area electron diffraction patterns evidently indicate hexagonal MgB2 film with a 30 degrees in-plane rotation with respect to the Al2O3 substrate. The films grown on Al2O3 show a zero-resistance transition temperature of 39.6 K with a transition width of 0.1 K. The critical current density at zero field is comparable to the depairing critical current density and rapidly decreases with increasing applied field due to the lack of pinning sites, as observed for high-quality MgB2 single crystals.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 39.6 | Pressure not reported | zero_resistance |
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