Fabrication of stable and reproducible sub-micron tunnel junctions
I. M. Pop, T. Fournier, T. Crozes, F. Lecocq, I. Matei, B. Pannetier, O. Buisson, W. Guichard
arXiv:1105.6204 · DOI 10.1116/1.3673790 · 2011-05-31 · Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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Abstract
We have performed a detailed study of the time stability and reproducibility of sub-micron $Al/AlO_{x}/Al$ tunnel junctions, fabricated using standard double angle shadow evaporations. We have found that by aggressively cleaning the substrate before the evaporations, thus preventing any contamination of the junction, we obtained perfectly stable oxide barriers. We also present measurements on large ensembles of junctions which prove the reproducibility of the fabrication process. The measured tunnel resistance variance in large ensembles of identically fabricated junctions is in the range of only a few percents. Finally, we have studied the effect of different thermal treatments on the junction barrier. This is especially important for multiple step fabrication processes which imply annealing the junction.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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