Low frequency resistance and critical current fluctuations in Al-based Josephson junctions
C. D. Nugroho, V. Orlyanchik, D. J. Van Harlingen
arXiv:1302.6175 · DOI 10.1063/1.4801521 · 2013-02-25 · Applied Physics Letters
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Abstract
We present low-temperature measurements of the low-frequency $1/f$ noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlO$_{x}$/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance have similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlO$_{x}$ barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.25 | Pressure not reported | unknown |
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