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Significant enhancement of upper critical fields by doping and strain in Fe-based superconductors

C. Tarantini, A. Gurevich, J. Jaroszynski, F. Balakirev, E. Bellingeri, I. Pallecchi, C. Ferdeghini, B. Shen, H. H. Wen, D. C. Larbalestier

arXiv:1108.5194 · 2011-08-25

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Abstract

We report measurements of Hc2(T) up to 85 Tesla on Ba1-xKxAs2Fe2 single crystals and FeSe1-xTex films tuned by doping and strain. We observed an Hc2 enhancement by nearly 25 T at 30 K for the optimally-doped Ba1-xKxAs2Fe2 as compared to the previous results and extraordinarily high slopes dHc2/dT = 250-500 T/K near Tc in FeSe1-xTex indicating an almost complete suppression of the orbital pair-breaking. Theoretical analysis of Hc2(T) in FeSe1-xTex and the optimally doped Ba1-xKxAs2Fe2 predicts an inhomogeneous Fulde-Ferrel-Larkin-Ovchinnikov state for H//ab and T < 3-10 K, and shows that Hc2 in multiband Fe based superconductor can be enhanced by doping and strain much more effectively than by the conventional way of increasing disorder.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Ba1-xKxAs2Fe2

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—Pressure not reported—
FeSe1-xTex

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—Pressure not reported—

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