Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates

V. Braccini; S. Kawale; E. Reich; E. Bellingeri; L. Pellegrino; A. Sala; M. Putti; K. Higashikawa; T. Kiss; B. Holzapfel; C. Ferdeghini

doi:10.1063/1.4826677

Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates

V. Braccini, S. Kawale, E. Reich, E. Bellingeri, L. Pellegrino, A. Sala, M. Putti, K. Higashikawa, T. Kiss, B. Holzapfel, C. Ferdeghini

arXiv:1309.1044 · DOI 10.1063/1.4826677 · 2013-09-04 · Applied Physics Letters

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Abstract

We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through Transmission Electron Microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Fe(Se,Te) Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	—