Direct-Write Ion Beam Irradiated Josephson Junctions

Ethan Y. Cho; Hao Li; Shane A. Cybart

doi:10.1109/ISEC46533.2019.8990934

Direct-Write Ion Beam Irradiated Josephson Junctions

Ethan Y. Cho, Hao Li, Shane A. Cybart

arXiv:1906.10328 · DOI 10.1109/ISEC46533.2019.8990934 · 2019-06-25 · 2019 IEEE International Superconductive Electronics Conference (ISEC)

T3experimental

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We highlight the reproducibility and level of control over the electrical properties of YBa$_2$Cu$_3$O$_7$ Josephson junctions fabricated with irradiation from a focused helium ion beam. Specifically, we show the results of electrical transport properties for several junctions fabricated using a large range of irradiation doses. At the lower end of this range, junctions exhibit superconductor-normal metal-superconductor (SNS) Josephson junction properties. However, as dose increases there is a transition to electrical characteristics consistent with superconductor-insulator-superconductor (SIS) junctions. To investigate the uniformity of large numbers of helium ion Josephson junctions we fabricate arrays of both SNS and SIS Josephson junctions containing 20 connected in series. Electrical transport properties for these arrays reveal very uniform junctions with no appreciable spread in critical current or resistance.