Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination
Lily Yang, Stephan Steinhauer, Elia Strambini, Thomas Lettner, Lucas Schweickert, Marijn A. M. Versteegh, Francesco Giazotto, Valentina Zannier, Lucia Sorba, Dmitry Solenov
arXiv:1909.07651 · DOI 10.1088/1361-6528/abc44e · 2019-09-17 · Nanotechnology
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Abstract
We have studied the effects of optical-frequency light on proximitized InAs/Al Josephson junctions based on highly n-doped InAs nanowires at varying incident photon flux and at three different photon wavelengths. The experimentally obtained IV curves were modeled using a shunted junction model which takes scattering at the contact interfaces into account. The Josephson junctions were found to be surprisingly robust, interacting with the incident radiation only through heating, whereas above the critical current our devices showed non-thermal effects resulting from photon exposure. Our work provides important guidelines for the co-integration of Josephson junctions alongside quantum photonic circuits and lays the foundation for future work on nanowire-based hybrid photon detectors.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| InAs Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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