Fabrication of superconducting through-silicon vias
Justin L. Mallek, Donna-Ruth W. Yost, Danna Rosenberg, Jonilyn L. Yoder, Gregory Calusine, Matt Cook, Rabindra Das, Alexandra Day, Evan Golden, David K. Kim, Jeffery Knecht, Bethany M. Niedzielski, Mollie Schwartz, Arjan Sevi, Corey Stull, Wayne Woods, Andrew J. Kerman, William D. Oliver
arXiv:2103.08536 · 2021-03-15
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Abstract
Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challenging. Here, we discuss our approach for realizing high-aspect-ratio superconducting TSVs\textemdash 10 $μ$m wide by 20 $μ$m long by 200 $μ$m deep\textemdash with densities of 100 electrically isolated TSVs per square millimeter. We characterize the DC and microwave performance of superconducting TSVs at cryogenic temperatures and demonstrate superconducting critical currents greater than 20 mA. These high-aspect-ratio, high critical current superconducting TSVs will enable high-density vertical signal routing within superconducting quantum processors.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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