Approaching the ultimate superconducting properties of (Ba,K)Fe2As2 by naturally formed low-angle grain boundary networks
Kazumasa Iida, Dongyi Qin, Chiara Tarantini, Takafumi Hatano, Chao Wang, Zimeng Guo, Hongy Gao, Hikaru Saito, Satoshi Hata, Michio Naito, Akiyasu Yamamoto
arXiv:2110.15577 · DOI 10.1038/s41427-021-00337-5 · 2021-10-29
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Abstract
The most effective way to enhance the dissipation-free supercurrent in presence of magnetic field for type II superconductors is the introduction of defects that acts as artificial pinning centres (APCs) for the vortices. For instance, the in-field critical current density of doped BaFe2As2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion-irradiation. The technique of ion-irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report on a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains having width around 30-60 nm. The grains are rotated around the b- (or a-) axis by 1.5 degree and around the c-axis by -1 degree, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| (Ba,K)Fe2As2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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