Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces
Muqing Yu, Changjiang Liu, Dengyu Yang, Xi Yan, Qianheng Du, Dillon D. Fong, Anand Bhattacharya, Patrick Irvin, Jeremy Levy
arXiv:2201.02561 · DOI 10.1021/acs.nanolett.2c00673 · 2022-01-07 · Nano letters
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Abstract
Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here we report nanoscale control of the metal-to-insulator transition at the LaAlO3/KTO (110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultra-low-voltage electron-beam lithography. At low temperatures, KTO-based devices show superconductivity that is tunable by an applied back gate. A nanowire device shows single-electron-transistor (SET) behavior. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| KTaO3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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