Sputtered NbN Films for Ultrahigh Performance Superconducting Nanowire Single-Photon Detectors

Ilya A. Stepanov; Aleksandr S. Baburin; Danil V. Kushnev; Evgeniy V. Sergeev; Oksana I. Shmonina; Aleksey R. Matanin; Vladimir V. Echeistov; Ilya A. Ryzhikov; Yuri V. Panfilov; Ilya A. Rodionov

doi:10.1063/5.0188420

Sputtered NbN Films for Ultrahigh Performance Superconducting Nanowire Single-Photon Detectors

Ilya A. Stepanov, Aleksandr S. Baburin, Danil V. Kushnev, Evgeniy V. Sergeev, Oksana I. Shmonina, Aleksey R. Matanin, Vladimir V. Echeistov, Ilya A. Ryzhikov, Yuri V. Panfilov, Ilya A. Rodionov

arXiv:2311.17000 · DOI 10.1063/5.0188420 · 2023-11-28

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

Nowadays ultrahigh performance superconducting nanowire single-photon detectors are the key elements in a variety of devices from biological research to quantum communications and computing. Accurate tuning of superconducting material properties is a powerful resource for fabricating single-photon detectors with a desired properties. Here, we report on the major theoretical relations between ultrathin niobium nitride (NbN) films properties and superconducting nanowire single-photon detectors characteristics, as well as ultrathin NbN films properties dependence on reactive magnetron sputtering recipes. Based on this study we formulate the exact requirements to ultrathin NbN films for ultrahigh performance superconducting nanowire single-photon detectors. Then, we experimentally study ultrathin NbN films properties (morphology, crystalline structure, critical temperature, sheet resistance) on silicon, sapphire, silicon dioxide and silicon nitride substrates sputtered with various recipes. We demonstrate ultrathin NbN films (obtained with more than 100 films deposition) with a wide range of critical temperature from 2.5 to 12.1 K and sheet resistance from 285 to 2000 ~$Ω$/sq, as well as investigate a sheet resistance evolution over for more than 40\% within two years. Finally, we found out that one should use ultrathin NbN films with specific critical temperature near 9 K and sheet resistance of 400 ~$Ω$/sq for ultrahigh performance SNSPD.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	12.1	Pressure not reported	unknown
NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	2.5	Pressure not reported	unknown