Molybdenum low resistance thin film resistors for cryogenic devices
Yu P Korneeva, M A Dryazgov, N V Porokhov, N N Osipov, M I Krasilnikov, A A Korneev, M. A. Tarkhov
arXiv:2406.11329 · DOI 10.1088/1361-6668/ad6adb · 2024-06-17 · Superconductor Science and Technology
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Abstract
We present a study of thin-film molybdenum resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5-1.5 keV ion cleaning-activation of NbN before Mo deposition which allows to obtain a high-quality Mo/NbN interface which together with additional aluminum bandage layer in the area of contact pads allow to reduce contact resistance below 1 Ohm. The quality of the interfaces is confirmed by transmission electron microscopy and X-ray reflectometry.
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