In situ Al$_2$O$_3$ passivation of epitaxial tantalum and aluminum films enables long-term stability in superconducting microwave resonators
Yi-Ting Cheng, Hsien-Wen Wan, Wei-Jie Yan, Lawrence Boyu Young, Yen-Hsun Glen Lin, Kuan-Hui Lai, Wan-Sin Chen, Chao-Kai Cheng, Ko-Hsuan Mandy Chen, Tun-Wen Pi, Yen-Hsiang Lin, Jueinai Kwo, Minghwei Hong
arXiv:2508.01232 · DOI 10.1063/5.0301974 · 2025-08-02 · APL Quantum
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Abstract
Long-term stability of superconducting microwave resonators is essential for scalable quantum technologies; however, surface and interface degradation continue to limit device stability. Here, we demonstrate exceptional stability in microstrip resonators fabricated from epitaxial tantalum and aluminum films, protected by in situ deposited Al$_2$O$_3$ under ultra-high vacuum. These resonators initially exhibit internal quality factors (Qi) exceeding one million and maintain high performance with minimal degradation after up to fourteen months of air exposure. In contrast, devices relying on native surface oxides show substantial declines in Qi over time, indicating increased microwave losses. X-ray photoelectron spectroscopy reveals that the in situ Al$_2$O$_3$ effectively suppresses interfacial oxidation and preserves the chemical integrity of the underlying superconducting films, whereas native oxides permit progressive oxidation, leading to device degradation. These findings establish a robust, scalable passivation strategy that addresses a longstanding materials challenge in the development of superconducting quantum circuits.
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