Room temperature reactive sputtering deposition of titanium nitride with high sheet kinetic inductance

Abstract

Superconducting thin films with high intrinsic kinetic inductance $L_{k}$ are important for high-sensitivity detectors, enabling strong coupling in hybrid quantum systems, and enhancing nonlinearities in quantum devices. We report the room-temperature reactive sputtering of titanium nitride thin films with a critical temperature $T_{c}$ of \SI{3.8}{K} and a thickness of \SI{27}{nm}. Fabricated into resonators, these films exhibit a sheet kinetic inductance $L_{k, \square}$ of 394~$\textrm{pH}/\square$, as inferred from resonant frequency measurements. %from this film and measure quality factors of $4\times 10^{4}$; these quality factors are likely limited by the low resistivity wafer. X-ray diffraction analysis confirms the formation of stoichiometric TiN, with no residual unreacted titanium. The films also demonstrate a characteristic sheet resistivity of 475~$Ω/\square$, yielding an impedance an order of magnitude higher than conventional 50~$Ω$ resonators. This property could enhance microwave single\textendash photon coupling strength by an order of magnitude, offering transformative potential for hybrid quantum systems and quantum sensing. Furthermore, the high $L_{k}$ enables Kerr nonlinearities comparable to state\textendash of\textendash the\textendash art quantum devices. Combined with its relatively high $T_{c}$, this thin film presents a promising platform for superconducting devices, including amplifiers and qubits operating at higher temperatures.

Source-reported materials — not catalogue approval

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