Ta-based Josephson junctions using insulating ALD TaN tunnel barriers

Abstract

Josephson junctions form the core circuit element in superconducting quantum computing circuits, single flux quantum digital logic circuits, and sensing devices such as SQUIDs. Aluminum oxide has typically been used as the tunnel barrier. Its formation by exposure to low oxygen pressures at room temperature for short periods of time makes it susceptible to aging and limits the thermal budget of downstream processes. In this paper, we report the first demonstration of α-Ta/insulating TaN/a-Ta superconductor/insulator/superconductor Josephson junctions fabricated on 300 mm wafers using CMOS-compatible processes. The junctions were fabricated on high-resistivity silicon substrates using standard processes available at 300 mm scale, including 193 nm optical lithography, ALD of TaN in a cluster tool, and chemical mechanical planarization to enable highly planar interfaces. Junction areas ranging from 0.03 um2 to 9 um2 with ALD TaN thickness between 2 nm and 7 nm were characterized. A critical current density of 76 uA/um2 was observed in junctions using 4 nm ALD TaN in the tunnel barrier. The dependence of Jc on ALD TaN layer thickness is analyzed, and the influence of junction geometry, packaging, and temperature on I-V characteristics is discussed. Junctions were retested after a period of 4 months to quantify junction aging. The potential of this novel material system and a 300 mm superconducting junction process flow to fabricate thermally and environmentally stable junctions is discussed. The vision of a Superconducting Quantum Process Design Kit for a Multi-Project Wafer program to enable rapid development and proliferation of superconducting quantum and digital digital logic systems is presented. This work represents the first step towards establishing such a Quantum Foundry, providing access to high quality qubits and single-flux quantum logic circuits at 300 mm wafer scale.

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