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Hole carrier in MgB_{2} characterized by Hall Measurements

W. N. Kang, C. U. Jung, Kijoon H. P. Kim, Min-Seok Park, S. Y. Lee, Hyeong-Jin Kim, Eun-Mi Choi, Kyung Hee Kim, Mun-Seog Kim, Sung-Ik Lee

arXiv:cond-mat/0102313 · DOI 10.1063/1.1392979 · 2001-02-19 · Applied Physics Letters

T1theoretical75 citations

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Abstract

The longitudinal resistivity rho_{xx} and Hall coefficient R_H were measured for MgB2 sintered under high pressure. We found that R_H is positive like cuprate high-Tc superconductors, and decreases as the temperature increases for 40 K < T < 300 K. The cotangent of the Hall angle was found to follow a+bT^2 behavior from Tc to 300 K. At T = 100 K, R_H = 4.1 x 10^{-11} m^3/C from which hole carrier density was determined to be 1.5 x 10^{23}/cm^3. This carrier density is 2 - 3 orders of magnitude larger than that of Nb3Sn superconductor and that of optimally doped YBa_2Cu_3O_y.

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FormulaReported Tc (K)Pressure (GPa)Type
MgB2

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40Pressure not reportedunknown
MgB2

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38.43 GPamidpoint
MgB2

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38.43 GPamidpoint

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