Growth mechanism of superconducting MgB2 films prepared by various methods
H. Y. Zhai, H. M. Christen, L. Zhang, M. Paranthaman, C. Cantoni, B. C. Sales, P. H. Fleming, D. K. Christen, D. H. Lowndes
arXiv:cond-mat/0103618 · DOI 10.1557/JMR.2001.0375 · 2001-03-30 · Journal of Materials Research
Active bibliographic source — not scientific approval
Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.
Abstract
The growth mechanisms of MgB2 films obtained by different methods on various substrates are compared via a detailed cross-sectional scanning electron microscopy (SEM) study. The analyzed films include (a) samples obtained by an ex-situ post-anneal at 900 degree of e-beam evaporated boron in the presence of an Mg vapor (exhibiting bulk-like Tc0 about 38.8 K), (b) samples obtained by the same ex-situ 900 degree anneal of pulsed laser deposition (PLD)-grown Mg+B precursors (exhibiting Tc0 ~ 25 K), and (c) films obtained by a low-temperature (600 - 630 degree) in-situ anneal of PLD-grown Mg+B precursors (with Tc0 about 24 K). A significant oxygen contamination was also present in films obtained from a PLD-grown precursors. On the other hand, it is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain smooth and (possibly) epitaxial films.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 38.8 | Pressure not reported | zero_resistance |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 25 | Pressure not reported | zero_resistance |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 24 | Pressure not reported | zero_resistance |
Similar papers
In-situ growth of superconducting MgB2 thin films by molecular beam epitaxy
similarity 0.93K Ueda & M. Naito · 2002 · arXiv:cond-mat/0210259
Source status unknown — claims are unverified
Growth of superconducting MgB2 thin films via postannealing techniques
similarity 0.92W. N. Kang et al. · 2002 · arXiv:cond-mat/0209226
Source status unknown — claims are unverified
Superconducting MgB2 thin films by pulsed laser deposition
similarity 0.92S. R. Shinde et al. · 2001 · arXiv:cond-mat/0103542
Source status unknown — claims are unverified
Superconducting magnesium diboride films with Tc \approx 24K grown by pulsed laser deposition with in-situ anneal
similarity 0.91H. M. Christen et al. · 2001 · arXiv:cond-mat/0103478
Source status unknown — claims are unverified
Synthesis of as-grown superconducting MgB_2 thin films by molecular beam epitaxy in UHV conditions
similarity 0.91Y. Harada et al. · 2004 · arXiv:cond-mat/0404252
Source status unknown — claims are unverified
Superconducting MgB2 Thin Films with Tc of about 39K Grown by Pulsed Laser Deposition
similarity 0.90S. F. Wang et al. · 2001 · arXiv:cond-mat/0104555
Source status unknown — claims are unverified