The Reactivity of MgB2 with Common Substrate and Electronic Materials
T. He, John M. Rowell, R. J. Cava
arXiv:cond-mat/0109370 · DOI 10.1063/1.1433915 · 2001-09-20 · Applied Physics Letters
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Abstract
The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 C and 800 C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia (YSZ), MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600 C, MgB2 reacted only with SiO2 and Si. At 800 C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.
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